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Te Shallow Donor Solubility Mechanism in GaAs

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Słupiński T., Zielińska-Rohozińska E., Harasimowicz T.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 5
1080-1084
EN
Results of thermal annealing of extremely highly doped GaAs:Te on room temperature Hall electron concentration and diffuse X-ray scattering are briefly reported. Reversible decrease/increase in electron concentration vs. temperature of annealing perfectly coincides with a strong increase/decrease in diffuse X-ray scattering intensity. An analysis of X-ray results indicates an arising of correlations in impurity positions in crystal lattice points in GaAs:Te solid solution for very high doping level. We give a sketch of a new formal model of tight bond creation between impurity atoms, which can consistently describe our results. The model is free from difficulties in describing annealing results encountered by a widely spread model of charge compensation by native acceptors.
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