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EN
We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using SiO_2 and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and SiO_2. It is seen that the ideality factor (1.82) of the Al/p-Si/SiO_2/DNA/Ag diode is lower than that (3.31) of the Al/p-Si/SiO_2/Ag diode. This indicates that the electronic performance of DNA/Si junction was better than that of SiO_2/Si junction. The interface states of the Al/p-Si/SiO_2/DNA/Ag and Al/p-Si/SiO_2/Ag junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
EN
CdS quantum dots were coated on TiO_2 layer by successive ionic layer adsorption and reaction method. An efficient photovoltaic energy conversion and significant quantum-size effect were observed. The magnitude of the short-circuit photocurrent density J_{SC} was found to be approximately 6.01 mA/cm^2 for graphene oxide-incorporated CdS/TiO_2 solar cell, while the J_{SC} of only CdS-sensitized solar cells was lower than 4.40 mA/cm^2. The efficiency of the CdS/TiO_2 solar cell with a graphene oxide layer containing CdS QDs was 60% higher than that of the CdS/TiO_2 solar cell. The cell efficiency was remarkably improved with the graphene oxide-incorporation. The carrier recombination of the QDs sensitized solar cells based on CdS-coated TiO_2 was significantly suppressed due to photogenerated charge carrier transports resulting from the presence of graphene oxide.
EN
The optical properties of the CdO and Pt doped CdO thin films synthesized by sol-gel technique were investigated. The lowest grain size value (81.34 nm) was found to be for CdO thin film. The Pt doped CdO films are transformed to clusters with nanoparticles. The transparency properties of the CdO thin film is changed with Pt doping. The plots of refractive index indicate abnormal and normal dispersion regions. The refractive index values of the CdO thin film are changed with Pt doping. The direct optical band gap values of the films were changed with doping of Pt. The film of 0.5% Pt doped CdO indicates the lowest optical band gap value (2.421 eV). The imaginary parts of the optical conductivity of the CdO and Pt doped CdO thin films are higher than that of the real parts of the optical conductivity.
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