Thin films of Ge_{100-x}S_x with different values of x are deposited on quartz substrates by a conventional thermal evaporation technique. The electrical conductivity of these films was measured. The experiments reveal that the electronic conduction is strongly composition dependent and is thermally activated with a single activation energy for x>40. A variable range hopping conduction mechanism seems to dominate when x=16 and 27. The optical absorption of the films is investigated using spectrophotometric measurements of the transmittance and reflectance in the wavelength range 200-3000 nm. All the studied compositions obey the Tauc relation concerning the non-direct transitions. The optical energy gap E_g value increases with the increase in chalcogen content x. The Urbach parameter E_0 decreases from 310 meV to 149 meV as x increases from 16 to 70.
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