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Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO

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Khomyak V., Slyotov M., Shtepliuk I., Slyotov O., Kosolovskiy V.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1039-1041
EN
Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum (ħω > E_{g}).
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