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Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs

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Havare A., Okur S., Yagmurcukardes N., Can M., Aydin H., Seker M., Demic S.
Acta Physica Polonica A
|
2013
|
vol. 123
|
issue 2
456-458
EN
In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current-voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
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