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Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection

100%

Kozič A., Paškevič Č., Sužiedėlis A., Gradauskas J., Ašmontas S., Szerling A., Wrzesińska H.

Acta Physica Polonica A

2006

vol. 110

issue 6

845-849

In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.

High power QW SCH InGaAs/GaAs lasers for 980-nm band

68%

Bugajski M., Mroziewicz B., Regiński K., Muszalski J., Kosiel K., Zbroszczyk M., Ochalski T., Piwoński T., Wawer D., Szerling A., Kowalczyk E., Wrzesińska H., Górska M.

Bulletin of the Polish Academy of Sciences: Technical Sciences

2005

vol. 53

issue 2

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1 Acta Physica Polonica A

1 Bulletin of the Polish Academy of Sciences: Technical Sciences

1 2006

1 2005

2 Szerling A.

2 Wrzesińska H.

1 Ašmontas S.

1 Bugajski M.

1 Gradauskas J.

1 Górska M.

1 Kosiel K.

1 Kowalczyk E.

1 Kozič A.

1 Mroziewicz B.

1 Muszalski J.

1 Ochalski T.

1 Paškevič Č.

1 Piwoński T.

1 Regiński K.

1 Sužiedėlis A.

1 Wawer D.

1 Zbroszczyk M.

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Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection

High power QW SCH InGaAs/GaAs lasers for 980-nm band