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Dynamics of the Electric Field in a GaAs/AlGaAs Superlattice after Femtosecond Optical Excitation: Application of Time-Resolved Spectroscopic Techniques

100%

Lisauskas A., Blöser C., Sachs R., Roskos H., Juozapavičius A., Valušis G., Köhler K.

Acta Physica Polonica A

2005

vol. 107

issue 2

250-255

We apply time-resolved photocurrent and differential electroreflectance spectroscopy to study the evolution of the internal field in a GaAs/AlGaAs superlattice after pulsed optical excitation at low temperature. The electric field dynamics is investigated by tracing the spectral position of the Wannier-Stark transitions as a function of delay time. We determine the electron sweep-out time, extract detailed information about the picosecond-time-scale drift of the charge carriers by comparing the measured data with the results of semi-classical self-consistent model calculations, and evaluate the two experimental techniques with respect to their ability to provide information about the carrier and field dynamics.

Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

84%

Subačius L., Venckevičius R., Kašalynas I., Seliuta D., Valušis G., Schmidt J., Lisauskas A., Roskos H., Alekseev K., Köhler K.

Acta Physica Polonica A

2011

vol. 119

issue 2

167-169

Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al_{0.3}Ga_{0.7}As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.

Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes

68%

Valušis G., Seliuta D., Tamošiūnas V., Širmulis E., Balakauskas S., Gradauskas J., Sužiedėlis A., Ašmontas S., Anbinderis T., Narkūnas A., Papsujeva I., Lisauskas A., Roskos H., Köhler K.

Acta Physica Polonica A

2005

vol. 107

issue 1

184-187

We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.

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3 Acta Physica Polonica A

1 2011

2 2005

3 Köhler K.

3 Lisauskas A.

3 Roskos H.

3 Valušis G.

2 Seliuta D.

1 Alekseev K.

1 Anbinderis T.

1 Ašmontas S.

1 Balakauskas S.

1 Blöser C.

1 Gradauskas J.

1 Juozapavičius A.

1 Kašalynas I.

1 Narkūnas A.

1 Papsujeva I.

1 Sachs R.

1 Schmidt J.

1 Subačius L.

1 Sužiedėlis A.

1 Tamošiūnas V.

1 Venckevičius R.

1 Širmulis E.

Search results

Dynamics of the Electric Field in a GaAs/AlGaAs Superlattice after Femtosecond Optical Excitation: Application of Time-Resolved Spectroscopic Techniques

Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes