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  1. 1 Open Physics

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  1. 1 2004

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  1. 1 Dolbak A.

  2. 1 Olshanetsky B.

  3. 1 Zhachuk R.

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Surface diffusion of Pb on clean Si surfaces

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Dolbak A., Zhachuk R., Olshanetsky B.
Open Physics
|
2004
|
vol. 2
|
issue 2
254-265
EN
Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first time.
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