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Changes of GaP: N Defect Structure under Hydrostatic Pressure

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Bąk-Misiuk J., Domagała J., Kozankiewicz B., Misiuk A., Adamczewska J., Skibska M.

Acta Physica Polonica A

1993

vol. 83

issue 1

87-93

The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c_{N}, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c_{N} > 10^{20} at. cm^{-3}. The model explaining the hydrostatic pressure induced defect structure changes is proposed.

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1 Acta Physica Polonica A

1 1993

1 Adamczewska J.

1 Bąk-Misiuk J.

1 Domagała J.

1 Kozankiewicz B.

1 Misiuk A.

1 Skibska M.

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Changes of GaP: N Defect Structure under Hydrostatic Pressure