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Electrical Properties of SbSI/Sb_2S_3 Single and Double Heterostructures

100%
Toroń B., Nowak M., Grabowski A., Kępińska M.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
830-832
EN
The SbSI/Sb_2S_3 single heterostructures as well as Sb_2S_3/SbSI/Sb_2S_3 and SbSI/Sb_2S_3/SbSI double heterostructures have been produced by applying CO_2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (T_{c} = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb_2S_3, p-P-p Sb_2S_3/SbSI/Sb_2S_3 and P-p-P SbSI/Sb_2S_3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb_2S_3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.
2
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Temperature Dependences of Optical Energy Gaps of SbSI@CNT and SbSeI@CNT

100%
Jesionek M., Nowak M., Kępińska M., Bednarczyk I.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
836-837
EN
This paper presents for the first time temperature dependences of optical energy gaps of SbSI@CNT and SbSeI@CNT, i.e. carbon nanotubes (CNTs) filled with antimony sulfoiodide (SbSI) and antimony selenoiodide (SbSeI). The heterostructures were prepared sonochemically using CNTs and elemental Sb, S or Se and I in the presence of solvent under ultrasonic irradiation. Spectral characteristics of diffusive transmittance and reflectance of SbSI@CNT and SbSeI@CNT were measured in temperature range 274 K < T < 333 K. The determinal temperature dependence of indirect forbidden optical energy gap of SbSI@CNT has been fitted with E_{gIf} (T) = (1.92(2)-3.6(6) × 10^{-4} × T) eV. Indirect allowed optical energy gap of SbSeI@CNT has been fitted with E_{gIa} (T) = (1.817(5)-7.1(2) × 10^{-4} × T) eV.
3
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Mobility of Ferroelectric Domains in Antimony Sulfoiodide

100%
Toroń B., Nowak M., Kępińska M., Szperlich P.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1093-1095
EN
Different optical energy gaps in ferroelectric and paraelectric phases as well as light scattering on domain walls allow to observe ferroelectric domains in antimony sulfoiodide (SbSI) near the Curie temperature. Mobility 8.11(44)× 10^{-8} m^2/(Vs) of ferroelectric domain walls under external electric field has been determined along c-axis of SbSI single crystals using optical transmittance microscopy.
4
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Optical Properties of SbSI Photonic Crystals

88%
Kępińska M., Starczewska A., Duka P., Nowak M., Szperlich P.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1115-1117
EN
This paper presents optical properties of SiO_2 opals infiltrated with SbSI and inverted SbSI opals for the first time. Registered reflectance spectra exhibit Bragg's peaks connected with photonic band gap. Calculated photonic band structure has been compared with experimental results.
5
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Properties of Sonochemically Prepared CuIn_{x}Ga_{1-x}S_{2} and CuIn_{x}Ga_{1-x}Se_{2}

64%
Jesionek M., Nowak M., Szperlich P., Kępińska M., Mistewicz K., Toroń B., Stróż D., Szala J., Rzychoń T.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1107-1109
EN
Nanoparticles of chalcopyrites copper indium gallium sulfide (CuIn_{x}Ga_{1-x}S_{2} or CIGS) and copper indium gallium selenide (CuIn_{x}Ga_{1-x}Se_{2} or CIGSe) were fabricated sonochemically. They were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, and diffuse reflectance spectroscopy. The electrical and photoelectrical properties of the fabricated nanomaterials were investigated.
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