Search results

Sort By:

Limit search:

Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al_xGa_{1-x}N Multiquantum Wells with Graded Interfaces

100%

Valcheva E., Dimitrov S., Monemar B., Haratizadeh H., Persson P., Amano H., Akasaki I.

Acta Physica Polonica A

2007

vol. 112

issue 2

395-400

Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al_xGa_{1-x}N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).

Refine search results

1 Acta Physica Polonica A

1 2007

1 Akasaki I.

1 Amano H.

1 Dimitrov S.

1 Haratizadeh H.

1 Monemar B.

1 Persson P.

1 Valcheva E.

Search results

Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al_xGa_{1-x}N Multiquantum Wells with Graded Interfaces