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Fabrication of High-Density GaN Nanowires through Ammoniating Ga_2O_3/Nb Films

100%

Zhuang H., Li B., Zhang S., Zhang X., Xue C., Wang D., Shen J.

Acta Physica Polonica A

2008

vol. 113

issue 2

723-730

High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating Ga_2O_3/Nb films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.

Growth of β-Ga_2O_3 Nanorods and Photoluminescence Properties

100%

Zhang, S., Zhuang H., Xue C., Li B., Shen J., Wang D.

Acta Physica Polonica A

2007

vol. 112

issue 6

1195-1201

β-Ga_2O_3 nanorods were successfully fabricated through annealing Ga_2O_3/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline Ga_2O_3 with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-Ga_2O_3 single crystal. The growth process of the β-Ga_2O_3 nanorods is probably dominated by conventional vapor-solid mechanism.

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2 Acta Physica Polonica A

1 2008

1 2007

2 Li B.

2 Shen J.

2 Wang D.

2 Xue C.

2 Zhuang H.

1 Zhang S.

1 Zhang X.

1 Zhang, S.

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Fabrication of High-Density GaN Nanowires through Ammoniating Ga_2O_3/Nb Films

Growth of β-Ga_2O_3 Nanorods and Photoluminescence Properties