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Deep Levels in Cd_{0.99}Mn_{0.01}Te:Ga

100%

Szatkowski J., Płaczek-Popko E., Sierański K., Bieg B.

Acta Physica Polonica A

1998

vol. 94

issue 3

575-578

Two types of samples were studied. In the material with higher donor concentration four electron traps labelled by us as E1 to E4 were found. For the traps E2 and E3 energies obtained from Arrhenius plots are equal to 0.24 eV and 0.36 eV, respectively. Electric field enhanced electron emission from the levels E1 and E4 was observed and described in terms of Frenkel-Poole mechanism. Capture process from the traps E2 was found to be thermally activated with energetic barriers equal to 0.20 eV for E2.

Deep Level Transient Spectroscopy Studies of CdMnTe

76%

Szatkowski J., Płaczek-Popko E., Hajdusianek A., Kuźmiński S., Bieg B., Becla P.

Acta Physica Polonica A

1995

vol. 87

issue 2

387-390

Deep levels in Ga doped n-type CdMnTe of 1% and 5% Mn contents and In doped n-type CdMnTe of 20% Mn content were studied using deep level transient spectroscopy technique. Our deep level transient spectroscopy results show presence of several groups of different traps.

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2 Acta Physica Polonica A

1 1998

1 1995

2 Bieg B.

2 Płaczek-Popko E.

2 Szatkowski J.

1 Becla P.

1 Hajdusianek A.

1 Kuźmiński S.

1 Sierański K.

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Deep Levels in Cd_{0.99}Mn_{0.01}Te:Ga

Deep Level Transient Spectroscopy Studies of CdMnTe