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Photoionization of Ge¯-DX State in GaAs

100%

Piotrzkowski R., Dmowski L. H.

Acta Physica Polonica A

1997

vol. 92

issue 5

950-952

We have determined the efficiency of photoionization of Ge¯-DX state in GaAs as a function of photon energy. The optical ionization energy derived from the fitting is about 1.0 eV. It proves a large difference between optical and thermal ionization energies and confirms that for Ge-impurity, the broken-bond model and large lattice relaxation are valid and not the breathing mode with small lattice relaxation, resulting from the calculations presented for Ge-impurity in T.M. Schmidt, A. Fazzio, M.J. Caldas, Mater. Sci. Forum 196/201, 273 (1995).

Far-Infrared Narrow-Band Photodetector Based on Magnetically Tunable Cyclotron Resonance-Assisted Transitions in Pure n-Type InSb

81%

Dmowski L. H., Cheremisin M., Skierbiszewski C., Knap W.

Acta Physica Polonica A

1997

vol. 92

issue 4

733-736

We present the possibility of using magnetic field to enhance responsivity and to tune spectral range of far-infrared InSb detector (based on photoconductivity effect) beyond its standard range limited to about 30 cm^{-1}. We show that due to cyclotron resonance assisted transitions we can use it as a tunable detector working up to energies about 180 cm^{-1} (22 meV). We have used such a detector as a spectrometer for measurements of the Landau emission from GaAs emitter.

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2 Acta Physica Polonica A

2 1997

2 Dmowski L. H.

1 Cheremisin M.

1 Knap W.

1 Piotrzkowski R.

1 Skierbiszewski C.

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Photoionization of Ge¯-DX State in GaAs

Far-Infrared Narrow-Band Photodetector Based on Magnetically Tunable Cyclotron Resonance-Assisted Transitions in Pure n-Type InSb