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Type I CdSe and CdMgSe Quantum Wells

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Rudniewski R., Rousset J., Janik E., Kossacki P., Golnik A., Nawrocki M., Pacuski W.
Acta Physica Polonica A
|
2014
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vol. 126
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issue 5
1167-1170
EN
In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/Cd_{0.9}Mg_{0.1}Se and Cd_{0.9}Mg_{0.1}Se/Cd_{0.85}Mg_{0.15}Se quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/Cd_{0.9}Mg_{0.1}Se wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities.
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