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Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal

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Sito J., Grodzicki M., Lament K., Wasielewski R., Mazur P., Ciszewski A.

Acta Physica Polonica A

2017

vol. 132

issue 2

357-360

The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.

Ru/GaN(0001) Interface Properties

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Wasielewski R., Grodzicki M., Sito J., Lament K., Mazur P., Ciszewski A.

Acta Physica Polonica A

2017

vol. 132

issue 2

354-357

We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.

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2 Acta Physica Polonica A

2 2017

2 Ciszewski A.

2 Grodzicki M.

2 Lament K.

2 Mazur P.

2 Sito J.

2 Wasielewski R.

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Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal

Ru/GaN(0001) Interface Properties