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From Localised to Ballistic Excitons in GaAs Quantum Wells

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Pulizzi F., Christianen P., Maan J., Eshlaghi S., Reuter D., Wieck A.
Acta Physica Polonica A
|
2001
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vol. 100
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issue 3
397-402
EN
The lateral motion of excitons in GaAs quantum wells is studied by means of spatially resolved photoluminescence. We show that at low temperatures (4.2 K) the exciton motion evolves from localised excitons (zero mobility) in thin quantum wells to extremely high mobilities in wide wells. We find that for the widest quantum well investigated the observed motion cannot be explained by simple exciton diffusion and must be explained by the propagation of ballistic exciton polaritons.
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