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Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers

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Koroliov A., Arlauskas A., Balakauskas S., Šoliūnas M., Maneikis A., Krotkus A., Šetkus A., Tamošiūnas V.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
846-848
EN
In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se_2 layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se_2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se_2 and n-type ZnO layers.
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