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Photoluminescence Study of GaN

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Zhang X., Kung P., Saxler A., Walker D., Wang Τ., Razeghi M.

Acta Physica Polonica A

1995

vol. 88

issue 4

601-606

Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al_{2}O_{3} (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emission centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.

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1 Acta Physica Polonica A

1 1995

1 Kung P.

1 Razeghi M.

1 Saxler A.

1 Walker D.

1 Wang Τ.

1 Zhang X.

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Photoluminescence Study of GaN