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Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As

100%

Gutowski M., Stefanowicz W., Proselkov O., Sawicki M., Żuberek R., Sadowski J.

Acta Physica Polonica A

2012

vol. 121

issue 5-6

1228-1230

In this work we report results of ferromagnetic resonance studies of a 6% 15nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from [\overline{1}10] to [110] direction close to the Curie temperature. The behavior of magnetization is described by anisotropy fields, H_{eff} (=4π M-H_{2⊥}), H_{2∥}, and H_{4∥}. In order to precisely investigate this reorientation, numerical values of anisotropy fields have been determined using powerful - but still largely unknown - interval calculations. In simulation mode this approach makes possible to find all the resonance fields for arbitrarily oriented sample, which is generally intractable analytically. In "fitting" mode we effectively utilize full experimental information, not only those measurements performed in special, distinguished directions, to reliably estimate the values of important physical parameters as well as their uncertainties and correlations.

Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures

68%

Kalbarczyk K., Foltyn M., Grzybowski M., Stefanowicz W., Adhikari R., Li T., Kruszka R., Kamińska E., Piotrowska A., Bonanni A., Dietl T., Sawicki M.

Acta Physica Polonica A

2016

vol. 130

issue 5

1196-1198

Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.

Magnetooptical Properties of (Ga,Fe)N Layers

68%

Papierska J., Rousset J., Pacuski W., Kossacki P., Golnik A., Nawrocki M., Gaj J., Suffczyński J., Kowalik I., Stefanowicz W., Sawicki M., Dietl T., Navarro-Quezada A., Faina B., Li T., Bonanni A.

Acta Physica Polonica A

2011

vol. 120

issue 5

921-923

Magnetooptical properties of (Ga,Fe)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the growth conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism. Possible reasons for differences in magnetic response determined by magnetic circular dichroism and SQUID measurements are discussed.

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3 Acta Physica Polonica A

1 2016

1 2012

1 2011

3 Sawicki M.

3 Stefanowicz W.

2 Bonanni A.

2 Dietl T.

2 Li T.

1 Adhikari R.

1 Faina B.

1 Foltyn M.

1 Gaj J.

1 Golnik A.

1 Grzybowski M.

1 Gutowski M.

1 Kalbarczyk K.

1 Kamińska E.

1 Kossacki P.

1 Kowalik I.

1 Kruszka R.

1 Navarro-Quezada A.

1 Nawrocki M.

1 Pacuski W.

1 Papierska J.

1 Piotrowska A.

1 Proselkov O.

1 Rousset J.

1 Sadowski J.

1 Suffczyński J.

1 Żuberek R.

Search results

Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As

Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures

Magnetooptical Properties of (Ga,Fe)N Layers