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Current-Voltage Characteristics of Nanowires Formed at the Co-Ge_{99.99}Ga_{0.01} Interface

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Wawrzyniak M., Maćkowski M., Śniadecki Z., Idzikowski B., Martinek J.
Acta Physica Polonica A
|
2010
|
vol. 118
|
issue 2
375-378
EN
We present a method of measurement of the current-voltage (I-V) and conductance-voltage (G-V) characteristics of nanowires with quantum point contact formed at the Co-Ge_{99.99}Ga_{0.01} interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and Ge_{99.99}Ga_{0.01}. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.
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