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Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap

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Teisseyre H., Perlin P., Leszczyński M., Suski T., Dmowski L., Grzegory I., Porowski S., Jun J., Moustakas T.

Acta Physica Polonica A

1995

vol. 87

issue 2

403-406

Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10^{17} cm^{-3} for the layer and about 5 × 10^{19} cm^{-3} for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.

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1 Acta Physica Polonica A

1 1995

1 Dmowski L.

1 Grzegory I.

1 Jun J.

1 Leszczyński M.

1 Moustakas T.

1 Perlin P.

1 Porowski S.

1 Suski T.

1 Teisseyre H.

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Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap