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Photoluminescence Study of Bulk GaN Doped with Beryllium

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Jaworek M., Wysmołek A., Kamińska M., Twardowski A., Boćkowski M., Grzegory I.
Acta Physica Polonica A
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2005
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vol. 108
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issue 4
705-710
EN
Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
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