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A Study on Discharge Characteristics by Using MF and RF Power in Remote Dielectric Barrier Discharge

100%
Kim D., Shim Y., Kim H., Han J.
Acta Physica Polonica A
|
2016
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vol. 129
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issue 4
707-710
EN
We have developed an atmospheric pressure plasma apparatus of remote dielectric barrier discharge (RDBD) applicable for a large area. We have systematically studied the characteristics of medium frequency (MF, 40 kHz) and radio frequency (RF, 13.56 MHz) discharge using an optical emission spectroscope. Nitrogen (N₂) and argon (Ar) gases were used in the MF and RF discharge excitation, respectively, in a mixture with clean dry air (CDA). The peak of oxygen radical (O*₂) appears at 259.3 nm when the RDBD is employed. Furthermore, intensive peaks are observed at gas ratios of N₂:CDA=100:1 in MF excitation and at gas ratios of Ar:CDA=70:0.5 in RF discharge excitation. On the other hand, the contact angle shows about 5° in PET samples after the RDBD treatment using the RF and MF discharge excitation. Surface analyses of polyethylene terephthalate (PET) samples were carried out using an atomic force microscope and X-ray photoelectron spectroscope.
2
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In vitro antibacterial effects of non-thermal atmospheric plasma irradiation on Staphylococcus pseudintermedius and Pseudomonas aeruginosa

89%
Bae S., Lim D., Kim D., Jeon J., Oh T., Bae S., Lim D., Kim D., Jeon J., Oh T.
Polish Journal of Veterinary Sciences
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2020
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vol. 23
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issue 1
3
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Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

52%
Kim D., Kim G., Jeon S., Cho M., Choi H., Kim M., Lee D., Kim J., Kim J., Eom G., Leem J.
Acta Physica Polonica A
|
2010
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vol. 117
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issue 6
941-944
EN
Multi-stacked InAs QDs embedded in ten periods of GaAs/In_{0.1}Ga_{0.9}As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In_{0.1}Ga_{0.9}As strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
4
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Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots

52%
Kim G., Jeon S., Cho M., Choi H., Kim D., Kim M., Kwon Y., Choe J., Kim J., Kim J., Leem J.
Acta Physica Polonica A
|
2010
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vol. 118
|
issue 4
673-676
EN
The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × 10^{11} to 1.36 × 10^{10} cm^{-2}. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
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