The effect of annealing at room temperature on the excess conductivity of oxygen deficient HoBa_2Cu_{3}O_{7 - δ} single crystal is studied. It is shown that there is substantial extension of the interval of linear dependence ρ_{ab} (T) and narrowing of the temperature area of the pseudo-gap regime as a result of annealing. The excess conductivity satisfies the exponential temperature dependence in a wide temperature interval. The temperature dependence of the pseudogap is satisfactorily described by the BCS-BEC theoretical model.
Fluorine (F) doping and the formation of F-vacancy (F_{n}V_{m}) clusters have been extensively studied in silicon (Si) as they can suppress the transient self-interstitial mediated diffusion of boron (B). Recent experimental studies by Bernardi et al. revealed that there is no significant concentration of F_{n}V_{m} clusters (for n ≥ 4, m ≥ 1) in disagreement with a number of density functional theory studies. In the present study we use electronic structure calculations to evaluate the binding energies of F_{n}V_{m} clusters and V_{n} clusters. The significant binding energies of the V _{n} clusters reveals that the concentration of the large F_{n}V_{m} clusters (n ≥4, m ≥1) will be limited compared to the V_{n} clusters or even smaller clusters.
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