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Crystallization in InGaAs/InP Heterostructures with a Strong Disorder

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Kovács G., Remenyi G., Gombos G., Savel'ev I. G., Kreshchuk A. M., Hegman N., Pödör B.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 4
783-786
EN
Non-linear current-voltage characteristics were observed in the range of filling factors of 0.3 ≤ v ≤ 0.4 in a two-dimensional electron system in InGaAs/InP heterostructures with a strong disorder. The observations are explained qualitatively in terms of magnetic field induced localization and Wigner solidification.
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