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Detector with High Internal Photocurrent Gain Based on ZnO:N

100%

Kosyachenko L., Lashkarev G., Ievtushenko A., Lazorenko V., Sklyarchuk V., Sklyarchuk O.

Acta Physica Polonica A

2011

vol. 119

issue 5

681-682

The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

100%

Yurtsenyuk N., Kosyachenko L., Sklyarchuk V., Maslyanchuk O., Sklyarchuk O., Grushko E.

Acta Physica Polonica A

2011

vol. 120

issue 5

957-959

The electrical properties of single Cd_{1 - x}Mn_{x}Te (x= 0.07 - 0.39) crystals with a resistivity of ≈ 10^8 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.

Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures

68%

Ievtushenko A., Lashkarev G., Lazorenko V., Karpyna V., Sichkovskyi V., Kosyachenko L., Sklyarchuk V., Sklyarchuk O., Bosy V., Korzhinski F., Ulyashin A., Khranovskyy V., Yakimova R.

Acta Physica Polonica A

2008

vol. 114

issue 5

1123-1129

Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.

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3 Acta Physica Polonica A

2 2011

1 2008

3 Kosyachenko L.

3 Sklyarchuk O.

3 Sklyarchuk V.

2 Ievtushenko A.

2 Lashkarev G.

2 Lazorenko V.

1 Bosy V.

1 Grushko E.

1 Karpyna V.

1 Khranovskyy V.

1 Korzhinski F.

1 Maslyanchuk O.

1 Sichkovskyi V.

1 Ulyashin A.

1 Yakimova R.

1 Yurtsenyuk N.

Search results

Detector with High Internal Photocurrent Gain Based on ZnO:N

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures