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1

Positron Annihilation in Internally Oxidized Copper

100%

Misheva M., Nancheva N., Feschiev N.

Acta Physica Polonica A

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1993

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vol. 83

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issue 3

365-369

EN

The positron lifetimes in internally oxidized polycrystalline copper, annealed at different temperatures, were measured. It was found that the dispersed alumina particles act as positron traps. Estimation of concentration of defects was made in the frames of the trapping model.

2

Characterization of Sn Films on Silicon by Slow Positron Implantation Spectroscopy

100%

Nancheva N., Docheva P., Anwand W., Brauer G.

Acta Physica Polonica A

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2001

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vol. 99

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issue 3-4

435-440

EN

Sn films grown on silicon substrate by d.c. magnetron sputtering have been investigated by slow positron implantation spectroscopy. As the substrate bias is one of the most important factors affecting the structure of a sputtered film, films grown at various substrate bias (+80 V, 0 V, -80 V) are compared and their properties are discussed.

3

Magnetron Sputtered SnO_{x} Films on Tin Probed by Slow Positron Implantation Spectroscopy

88%

Nancheva N., Docheva P., Anwand W., Brauer G., Coleman P.

Acta Physica Polonica A

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1999

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vol. 95

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issue 4

623-626

EN

SnO_{x} films grown on tin substrates via d.c. magnetron sputtering at different bias were studied by slow positron implantation spectroscopy. The change of substrate bias from -40 V to -140 V and its influence on the films is shown and discussed.

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3 Acta Physica Polonica A

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3 Nancheva N.

2 Anwand W.

2 Brauer G.

2 Docheva P.

1 Coleman P.

1 Feschiev N.

1 Misheva M.

Positron Annihilation in Internally Oxidized Copper

Characterization of Sn Films on Silicon by Slow Positron Implantation Spectroscopy

Magnetron Sputtered SnO_{x} Films on Tin Probed by Slow Positron Implantation Spectroscopy