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Modeling of HgCdTe LWIR detector for high operation temperature conditions

100%
Gawron W., Martyniuk P., Madejczyk P., Rogalski A., Piotrowski J.
Metrology and Measurement Systems
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2013
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issue 2
2
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Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

86%
Madejczyk P., Gawron W., Piotrowski A., Kłos K., Rutkowski J., Rogalski A.
Acta Physica Polonica A
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2010
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vol. 118
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issue 6
1199-1204
EN
One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P^{+}-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH_3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH_3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R_0A product of HgCdTe photodiodes in temperatures close to 230 K.
3
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Surface smoothness improvement of HgCdTe layers grown by MOCVD

86%
Gawron W., Madejczyk P., Kłos K., Rutkowski J., Piotrowski A., Rogalski A., Mróz W.
Bulletin of the Polish Academy of Sciences: Technical Sciences
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2009
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vol. 57
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issue 2
4
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Growth of MOCVD HgCdTe heterostructures for uncooled infrared photodetectors

73%
Piotrowski A., Madejczyk P., Gawron W., Kłos K., Pawluczyk J., Grudzień M., Piotrowski J., Rogalski A.
Bulletin of the Polish Academy of Sciences: Technical Sciences
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2005
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vol. 53
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issue 2
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