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Analitic Properties and Self-Consistency in a Schottky Barrier Model

100%

Jędrzejek C., Stępień B.

Acta Physica Polonica A

1991

vol. 79

issue 2-3

161-165

We apply a one-dimensional model to studies of intrinsic Schottky barriers. The semiconductor possesses two bands (s and p) and the metal has one conduction band. For the first time explicitly analytic formula for the density of states is given. An extremely accurate analytic formula (compared to numerical results) for the Fermi level position is proposed. It is shown that the Fermi level of the (covalent) semiconductor-metal interface is independent of the metal bulk parameters. Also self-consistent numerical results are presented.

Formation Energy and Electronic Structure of II-VI/IV Semiconductor Superlattices

81%

Jędrzejek C., Konior J., Kaprzyk S.

Acta Physica Polonica A

1995

vol. 87

issue 2

349-352

We calculate formation energy and electronic structure of ultrathin (001)II-VI/IV semiconductor superlattices using the Korringa-Kohn-Rostoker all-electron method. Formation energies (∆H) are 2.18 eV for (Ge_{2})_{1}(ZnSe)_{1} and 1.50 eV for (ZnS)_{1}(Si_{2})_{1}. The results of this work are significantly different from these by Ferraz and Srivastava who obtained ∆H = 0.88 eV for (001)(Ge_{2})_{1}(ZnSe)_{1} and moreover the one-layer super-lattices are metallic, which confirms the results by Ohno and Ito. The large formation energies surely lead to interfacial instability.

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2 Acta Physica Polonica A

1 1995

1 1991

2 Jędrzejek C.

1 Kaprzyk S.

1 Konior J.

1 Stępień B.

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Analitic Properties and Self-Consistency in a Schottky Barrier Model

Formation Energy and Electronic Structure of II-VI/IV Semiconductor Superlattices