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A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

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Dróżdż P., Korona K., Sarzyński M., Czernecki R., Skierbiszewski C., Muzioł G., Suski T.

Acta Physica Polonica A

2016

vol. 130

issue 5

1209-1212

The potential fluctuations in III-nitride quantum wells lead to many effects like emission broadening and S-shape energy vs. temperature dependence. The best description of the energy dependence comes from calculations based on Gaussian density of states. However, in most of the published reports, changes of carrier lifetime with energy and temperature are not taken into account. Since experimental evidence shows that lifetime significantly depends on energy and temperature, here we propose a model that describes two basic parameters of luminescence: lifetime of carries and emission energy as a function of temperature in the case of quantum wells and layers that are characterized by potential fluctuations. Comparison of the measured energy and lifetime dependences on temperature in specially grown InGaN/GaN quantum wells and InAlGaN layer shows very good agreement with the proposed theoretical approach.

Waveguide Design for Long Wavelength InGaN Based Laser Diodes

84%

Muzioł G., Turski H., Siekacz M., Sawicka M., Wolny P., Cheze C., Cywiński G., Perlin P., Skierbiszewski C.

Acta Physica Polonica A

2012

vol. 122

issue 6

1031-1033

One-dimensional optical waveguide calculations were performed to study the dependence of waveguide design on confinement factor (Γp) and optical losses (α_i) of nitride laser diodes for emission wavelength ranging from 405 nm to 520 nm. We found that the conventional waveguide design containing GaN waveguide and AlGaN cladding layers known from violet laser diode does not support sufficient confinement of the optical mode for long wavelength devices (λ > 450 nm). We proposed a new design consisting of a thick InGaN waveguide which enhances the confinement. We compared the theoretical predictions with laser diodes grown by plasma assisted molecular beam epitaxy.

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2 Acta Physica Polonica A

1 2016

1 2012

2 Muzioł G.

2 Skierbiszewski C.

1 Cheze C.

1 Cywiński G.

1 Czernecki R.

1 Dróżdż P.

1 Korona K.

1 Perlin P.

1 Sarzyński M.

1 Sawicka M.

1 Siekacz M.

1 Suski T.

1 Turski H.

1 Wolny P.

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A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

Waveguide Design for Long Wavelength InGaN Based Laser Diodes