With a newly developed technique, we measure voltage, electric field and charge distribution of high field domains in semi-insulating GaAs under high electric bias. Based on these new quantitative data resolved in time and space, which are synchronized with the current pulses, we confront the generally accepted model which explains the domain formation with field enhanced trapping from EL2.
A magnetic field induced coupling is observed between the Landau levels with different quantum number of two GaAs quantum wells separated by a thin (Ga,Al)As tunnel barrier using magneto-photoluminescence-excitation spectroscopy. This coupling cannot be due to a resonance between single particle energy levels, and therefore an explanation is proposed in terms of the Coulomb interaction of magneto-excitons across the thin barrier.
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