Results found: 3

Number of results on page

Search results

Sort By:

Limit search:

Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

100%

Bak-Misiuk J., Dynowska E., Romanowski P., Misiuk A., Sadowski J., Caliebe W.

Acta Physica Polonica A

2012

vol. 121

issue 4

903-905

Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga_{1-x}Mn_xAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs

Defect Structure of High-Temperature-Grown GaMnSb/GaSb

84%

Romanowski P., Bak-Misiuk J., Dynowska E., Domagala J., Sadowski J., Wojciechowski T., Barcz A., Jakiela R., Caliebe W.

Acta Physica Polonica A

2010

vol. 117

issue 2

341-343

GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga_{1-x}Mn_{x}Sb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

68%

Wieteska K., Misiuk A., Prujszczyk M., Wierzchowski W., Surma B., Bąk-Misiuk J., Romanowski P., Shalimov A., Capan I., Yang D., Graeff W.

Acta Physica Polonica A

2008

vol. 114

issue 2

439-446

Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c_O) up to 1.1×10^{18} cm^{-3}, admixed with N or Ge (Si-N, c_N ≤ 1.2×10^{15} cm^{-3}, or Si-Ge, c_{Ge} ≈ 7×10^{17} cm^{-3}, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.

Refine search results

3 Acta Physica Polonica A

1 2012

1 2010

1 2008

3 Romanowski P.

2 Bak-Misiuk J.

2 Caliebe W.

2 Dynowska E.

2 Misiuk A.

2 Sadowski J.

1 Barcz A.

1 Bąk-Misiuk J.

1 Capan I.

1 Domagala J.

1 Graeff W.

1 Jakiela R.

1 Prujszczyk M.

1 Shalimov A.

1 Surma B.

1 Wierzchowski W.

1 Wieteska K.

1 Wojciechowski T.

1 Yang D.

Search results

Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

Defect Structure of High-Temperature-Grown GaMnSb/GaSb

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment