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Sub-Terahertz Emission from Field-Effect Transistors

100%

Yavorskiy D., Karpierz K., Kopyt P., Grynberg M., Łusakowski J.

Acta Physica Polonica A

2017

vol. 132

issue 2

335-337

Several commercially available field-effect GaInAs-based transistors were studied as emitters of electromagnetic radiation. The emitters were tested either at room or at liquid helium temperature. To spectrally analyse emitted radiation, we applied three different experimental techniques: a spectrum analyser with antennas and mixers, a Michelson interferometer and a magnetic-field-tunable InSb detector. We show that the emission consists of a fundamental frequency of 11.5 GHz and its multiple harmonics spanning the emission band up to about 400 GHz. Analysis of the results allows us to suggest that the emission is caused by a Gunn effect and a high harmonics content is related to a pulse-like time dependence of the current.

An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors

86%

Kucharski K., Zagrajek P., Tomaszewski D., Panas A., Głuszko G., Marczewski J., Kopyt P.

Acta Physica Polonica A

2016

vol. 130

issue 5

1193-1195

Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.

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2 Acta Physica Polonica A

1 2017

1 2016

2 Kopyt P.

1 Grynberg M.

1 Głuszko G.

1 Karpierz K.

1 Kucharski K.

1 Marczewski J.

1 Panas A.

1 Tomaszewski D.

1 Yavorskiy D.

1 Zagrajek P.

1 Łusakowski J.

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Sub-Terahertz Emission from Field-Effect Transistors

An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors