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1
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Density of States and Photoluminescence Spectra in the Dense Arrays of Epitaxial CdSe/ZnSe Quantum Dots with Gaussian Potential Profile

100%
Golovatenko A., Semina M., Rodina A., Shubina T.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-107-A-110
EN
The paper reports on the studies of excitonic level arrangement in dense arrays of CdSe/ZnSe quantum dots grown by molecular beam epitaxy. Our modeling, exploiting experimental data obtained by optical and transmission electron microscopy studies, has exhibited inconsistency between the energy and width of experimental emission band and those predicted by a straightforward model for calculation of the density of excitonic states in the dots. To reach an agreement, we assume possibility of energy transfer between the adjacent dots of different sizes and propose ways for its experimental verification.
2
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Optical Absorption in Periodic InN:In Structures

88%
Plotnikov D., Shubina T., Jmerik V., Semenov A., Ivanov S.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
191-196
EN
Optical absorption measurements were exploited to study periodic InN:In structures grown by plasma-assisted molecular beam epitaxy with the thickness of the metallic inclusions varied from 2 to 48 monolayers. We demonstrate that the observed higher-energy shift of an effective absorption edge may be due to In depletion of the InN matrix via the coalescence of In into large clusters, accompanied by the respective higher-energy shift of the Mie resonance. The relevant uncertainty in the optical gap of InN is discussed.
3
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CdSe Layers of Below Critical Thickness in ZnSe Matrix: Intrinsic Morphology and Defect Formation

76%
Sedova I., Shubina T., Sorokin S., Sitnikova A., Toropov A., Ivanov S., Willander M.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
519-525
EN
Three main stages of the intrinsic morphology transformation of MBE grown CdSe fractional monolayers in ZnSe with increase in their nominal thickness w in the 0.1-3.0 monolayer range were found using both structural and optical characterization techniques. Emergence of the extended (15-30 nm) CdSe-enriched quantum-dot-like pseudomorphic islands at w>0.7 monolayer with the density increasing up to 2.5×10^{10} cm^{-2} at w=2.8 monolayer is clearly displayed in the optical properties of CdSe fractional monolayer nanostructures. The below critical thickness CdSe fractional monolayers having extremely high quantum efficiency can be very perspective as an active region of ZnSe-based blue-green lasers.
4
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Optically Pumped Low Threshold ZnSe Based Lasers with 2.8 ML CdSe Active Region

76%
Sorokin S., Toropov A., Shubina T., Lebedev A., Sedova I., Ivanov S., Waag A.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
539-544
EN
Room-temperature optically pumped (Zn,Mg)(S,Se)/(Zn,Cd)Se laser structures have been grown by molecular beam epitaxy. Using of alternatively-strained short-period superlattice waveguide results in low threshold power density values over the whole blue-green (470-520 nm) wavelength range. Incorporation of CdSe fractional monolayer active region provides more than fourfold further decrease in threshold with respect to quantum well laser structure. Optical and structural properties of laser structure with 2.8 monolayer CdSe are discussed in detail.
5
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Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates

64%
Kaygorodov V., Sorokin V., Sedova I., Nekrutkina O., Sorokin S., Shubina T., Toropov A., Ivanov S.
Acta Physica Polonica A
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2001
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vol. 100
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issue 3
443-450
EN
We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.
6
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Optical Studies of Thermally Activated Vertical Hole Transport in ZnCdSe/ZnSSe Superlattice

64%
Lebedev A., Sorokin S., Toropov A., Shubina T., Il'inskaya N., Nekrutkina O., Ivanov S., Pozina G., Bergman P., Monemar B.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
421-426
EN
Miniband transport in alternatively-strained ZnCdSe/ZnSSe short period superlattices is investigated using a structure with an enlarged quantum well. Temperature dependences of time-resolved and continuous wave photoluminescence have been measured, demonstrating an efficient temperature-induced vertical hole transport. A quantitative description is given for the carrier kinetics in these structures.
7
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AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency

64%
Shevchenko E., Toropov A., Nechaev D., Jmerik V., Shubina T., Ivanov S., Yagovkina M., Pozina G., Bergman J., Monemar B.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1140-1142
EN
We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick Al_{x}Ga_{1-x}N/Al_{x+0.1}Ga_{0.9-x}N quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
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