Results found: 3

Number of results on page

Search results

Sort By:

Limit search:

Terahertz Resonant Detection by Plasma Waves in Nanometric Transistors

100%

Teppe F., El Fatimy A., Boubanga S., Knap W., Seliuta D., Valusis G., Chenaud B.

Acta Physica Polonica A

2008

vol. 113

issue 3

815-820

The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the THz range for a sufficiently short gate length field effect transistors. A variety of possible applications of field effect transistor operating as a THz device were suggested. In particular, it was shown that the nonlinear properties of plasma oscillations can be utilized for THz tunable detectors. During the last few years THz detection related to plasma wave instabilities in nanometer size field effect transistors was demonstrated experimentally. In this work we review our recent experimental results on the resonant plasma wave detection at cryogenic and room temperatures.

THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors

68%

Dyakonova N., El Fatimy A., Meziani Y., Coquillat D., Knap W., Teppe F., Buzatu P., Diforte-Poisson M., Dua C., Piotrowicz S., Morvan E., Delage S.

Acta Physica Polonica A

2011

vol. 120

issue 5

924-926

The current flowing in two-dimensional channel of field effect transistors can generate different types of charge density perturbations. They can have a form of uncorrelated hot plasmons or plasma waves. The mechanism of plasma wave generation depends on the parameter ωt and on boundary conditions of the channel. At ωt ≪ 1 only hot plasmons can be generated. The THz emission due to radiative decay of hot plasmons has a broad spectrum and can be only poorly controlled by the transistor gate. The tunability of THz emission can be obtained in the case of the Dyakonov-Shur plasma wave instability. In this work we present experimental studies of THz emission in InGaP/InGaAs/GaAs and GaN/AlGaN based field effect transistors. We report on two types of emission onset: (i) a smooth one typical for hot plasmons generation and (ii) threshold-like one characteristic for plasma waves instabilities. The tunability and spectra of emission change depending on the transistor configuration. We discuss the results suggesting several possible mechanisms of plasma wave excitation.

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

68%

Teppe F., Consejo C., Torres J., Chenaud B., Solignac P., Fathololoumi S., Wasilewski Z., Zholudev M., Dyakonova N., Coquillat D., El Fatimy A., Buzatu P., Chaubet C., Knap W.

Acta Physica Polonica A

2011

vol. 120

issue 5

930-932

We report on the resonant detection of a 3.1 THz radiation produced by a quantum cascade laser using a 250 nm gate length GaAs/AlGaAs field effect transistor at liquid nitrogen temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is enhanced by increasing the drain current and driving the transistor into saturation regime. These results clearly show that plasma wave nanometer-size transistors can be used as detectors in all-solid-state terahertz systems where quantum cascade lasers act as sources.

Refine search results

3 Acta Physica Polonica A

2 2011

1 2008

3 El Fatimy A.

3 Knap W.

3 Teppe F.

2 Buzatu P.

2 Chenaud B.

2 Coquillat D.

2 Dyakonova N.

1 Boubanga S.

1 Chaubet C.

1 Consejo C.

1 Delage S.

1 Diforte-Poisson M.

1 Dua C.

1 Fathololoumi S.

1 Meziani Y.

1 Morvan E.

1 Piotrowicz S.

1 Seliuta D.

1 Solignac P.

1 Torres J.

1 Valusis G.

1 Wasilewski Z.

1 Zholudev M.

Search results

Terahertz Resonant Detection by Plasma Waves in Nanometric Transistors

THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors