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Investigation of Crystal Growth of SrPrGaO_{4} and SrLaGaO_{4}

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Uecker R., Reiche P., Ganschow S., Uecker D.-C., Schultze D.

Acta Physica Polonica A

1997

vol. 92

issue 1

23-34

Single crystals of SrPrGaO_{4} and SrLaGaO_{4} have been grown using the Czochralski technique. Both materials melt incongruently at 1462°C and 1516°C. The non-stoichiometric crystals contain more strontium than the starting melts. Constitutional supercooling is retarded by special growth conditions and optimum melt composition. Because of their small mismatch both crystals are recommended as substrates for YBa_{2}Cu_{3}O_{7-x} epitaxy.

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1 Acta Physica Polonica A

1 1997

1 Ganschow S.

1 Reiche P.

1 Schultze D.

1 Uecker D.-C.

1 Uecker R.

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Investigation of Crystal Growth of SrPrGaO_{4} and SrLaGaO_{4}