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Influence of Oxygen Impurities on Electrical Properties of Fullerene C_{60}

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Rabenau T., Roth S., Kremer R. K.

Acta Physica Polonica A

1995

vol. 87

issue 4-5

881-884

We present high temperature dc, ac and contactless microwave conductivity results on solid-state C_{60} (films and crystals) from room temperature up to 850 K. Heating pristine samples, which were exposed to the ambient atmosphere, under dynamic vacuum at first leads to a reduction of the electrical resistance and finally, above ≈700 K, to an increase in the resistance. The decrease is ascribed to oxygen desorption and the increase to the chemical reactivity of residual chemisorbed oxygen with the C_{60} host molecules, respectively. Samples, annealed above 800 K, display a reversible temperature dependence of the resistance. The high temperature regime of their resistance exhibits an activated behaviour with an universal activation energy of 2E_{a} = 1.85 ± 0.04 eV for crystals and films, which is identical to the HOMO-LUMO splitting of the C_{60}-molecules.

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1 Acta Physica Polonica A

1 1995

1 Kremer R. K.

1 Rabenau T.

1 Roth S.

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Influence of Oxygen Impurities on Electrical Properties of Fullerene C_{60}