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Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM

100%
Ivaldi F., Kret S., Szczepańska A., Czernecki R., Kryśko M., Grzanka S., Leszczyński M.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
660-662
EN
Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.
2
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Application of Graphics Processing Unit for In-Line Electron Holography

100%
Morawiec K., Dłużewski P., Kret S., Szczepańska A., Li T., Sloan J.
Acta Physica Polonica A
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2017
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vol. 131
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issue 5
1353-1356
EN
In the present work, software for exit electron wave reconstruction based on the iterative approach was implemented and a new method for drift-correction of the focal series was proposed.
3
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Electron Microscopy and X-ray Structural Investigations of Incommensurate Spin-Ladder Sr_{4.1}Ca_{4.7}Bi_{0.3}Cu_{17}O_{29} Single Crystals

84%
Dłużewski P., Pietraszko A., Kozłowski M., Szczepańska A., Górecka J., Baran M., Leonyuk L., Babonas G.-J., Lebedev O., Szymczak R.
Acta Physica Polonica A
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2000
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vol. 98
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issue 6
729-737
EN
Transmission electron microscopy and X-ray diffraction proved chain ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3° around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
4
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TEM Study of the Structural Properties of Nanowires Based on Cd, Zn, Te grown by MBE on Silicon Substrates

84%
Kaleta A., Kret S., Sanchez A., Bilska M., Kurowska B., Szczepańska A., Płachta J., Wojnar P., Wojciechowski T.
Acta Physica Polonica A
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2017
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vol. 131
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issue 5
1399-1405
EN
In this work we report on the atomic structures, elemental distribution, defects and dislocations of three types of semiconductor nanowires: ZnTe, CdTe, and complex ZnTe/(Cd,Zn)Te core/shell hetero-nanowires grown by a molecular beam epitaxy on (111) Si substrate using a vapor-liquid-solid mechanism. The structural properties and the chemical gradients were measured by transmission electron microscopy methods. The nanowires reveal mainly sphalerite structure, however wurtzite nanowires were also observed.
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