Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 2

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Theoretical Analysis of Optical Losses in CdS/CdTe Solar Cells

100%
Roshko V., Kosyachenko L., Grushko E.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 5
954-956
EN
Based on the known refractive index and extinction coefficient, calculations of optical losses in glass/transparent conducting oxide/CdS/CdTe solar cells have been carried out taking into account reflections at the interfaces and absorption in the transparent conducting oxide (indium tin oxide or SnO_2:F) and CdS layers. It has been shown that the losses caused by reflections at the interfaces result in lowering the short-circuit current by ≈ 9% whereas absorption in the transparent conducting oxide and CdS layers with the typical thicknesses lead to losses of 15-16% for glass/SnO_2/CdS/CdTe, and 22-24% for glass/indium tin oxide/CdS/CdTe solar cells.
2
Content available remote

Limitations on Thickness of Absorber Layer in CdS/CdTe Solar Cells

100%
Mykytyuk T., Roshko V., Kosyachenko L., Grushko E.
Acta Physica Polonica A
|
2012
|
vol. 122
|
issue 6
1073-1076
EN
Calculations of the integrated absorptive capacity of CdTe layer taking into account the spectrum of the AM1.5 solar radiation and the absorption coefficient of CdTe are carried out. The recombination losses at the front and rear surfaces of the CdTe layer and in the space-charge region are also calculated based on the continuity equation. The restrictions on the thickness of CdTe in CdS/CdTe heterojunction have been ascertained taking into account all types of losses. It is shown that in CdTe, the almost complete absorption of photons (99.9%) in the hν > E_{g} range is observed at a layer thickness of more than 20-30 μm, and the absorptive capacity of photons in a CdTe layer of thickness 1 μm is about 93%. The obtained results indicate that when the CdTe absorber layer is very thin, it is impossible to avoid a noticeable decrease of the short circuit current density J_{sc} as compared with a typical thickness of the absorber layer. The loss in J_{sc} is 19-20% when the thickness is 0.5 μm compared to 5% for a thickness of 2-3 μm.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.