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Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

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Misiuk A., Wierzchowski W., Wieteska K., Londos C., Andrianakis A., Bak-Misiuk J., Yang D., Surma B.

Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × 10^{14} cm^{-3} (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.

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1 Acta Physica Polonica A

1 2010

1 Andrianakis A.

1 Bak-Misiuk J.

1 Londos C.

1 Misiuk A.

1 Surma B.

1 Wierzchowski W.

1 Wieteska K.

1 Yang D.

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Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure