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Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

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Kreshchuk A., Novikov S., Savel'ev I., Polyanskaya T., Pődör B., Reményi G., Kovács G.

Acta Physica Polonica A

1998

vol. 94

issue 3

415-420

The energy relaxation in two-dimensional electron gas in In_{0.53}Ga_{0.47}As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h_{14}=(1.1±0.1)×10^{7} V/cm. Available data for the piezoelectric constant of In_{x}Ga_{1-x}As are discussed in the light of the results of this work.

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1 Acta Physica Polonica A

1 1998

1 Kovács G.

1 Kreshchuk A.

1 Novikov S.

1 Polyanskaya T.

1 Pődör B.

1 Reményi G.

1 Savel'ev I.

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Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction