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Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique

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Gelczuk L., Dąbrowska-Szata M., Jóźwiak G., Radziewicz D.
Acta Physica Polonica A
|
2004
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vol. 106
|
issue 2
265-272
EN
Two deep traps associated with lattice-mismatch induced defects in n-type In_{0.042}Ga_{0.958}As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.
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