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Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p^{+}n-Diodes

100%

Poklonski N., Gorbachuk N., Tarasik M., Shpakovski S., Filipenia V., Skuratov V., Wieck A., Kołtunowicz T.

Acta Physica Polonica A

2011

vol. 120

issue 1

111-114

The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the p^{+}-region of diodes (energy 107 MeV, fluence Φp from 5 × 10^7 to 4 × 10^9 cm^{-2}). It is shown that recovery charge Q_{rr} is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge Q_{rrA}, due to the high reverse conductance phase, decreases faster than the value Q_{rr}.

Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions

100%

Poklonski N., Gorbachuk N., Nha V., Tarasik M., Shpakovski S., Filipenia V., Skuratov V., Wieck A., Kołtunowicz T.

Acta Physica Polonica A

2013

vol. 123

issue 5

926-928

Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the p^{+}-region (implantation energy 170 MeV, fluence Φp from 5 × 10^7 to 10^9 cm^{-2}). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.

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2 Acta Physica Polonica A

1 2013

1 2011

2 Filipenia V.

2 Gorbachuk N.

2 Kołtunowicz T.

2 Poklonski N.

2 Shpakovski S.

2 Skuratov V.

2 Tarasik M.

2 Wieck A.

1 Nha V.

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Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p^{+}n-Diodes

Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions