Results found: 3

Number of results on page

Search results

Sort By:

Limit search:

Aluminum-Doped Zinc Oxide Thin Films Prepared by Sol-Gel and~RF Magnetron Sputtering

100%

Wu G., Chen Y., Lu H.

Acta Physica Polonica A

2011

vol. 120

issue 1

149-152

Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. In this paper, aluminum-doped zinc oxide thin films have been prepared on glass substrates using a sol-gel route and the radio-frequency magnetron sputtering process. The stoichiometry could be easily adjusted by controlling the nanosized precursor concentration and the thickness by dip-coating cycles. On the other hand, the mixed N_2O/Ar plasma gas provided adequate N doping for the RF sputtering process. The results showed the low electrical resistivity of 21.5 Ω cm with the carrier concentration of - 3.21 × 10^{18} cm^{-3} for the n-type aluminium-doped zinc oxide film. They were 34.2 Ω cm and + 9.68 × 10^{16} cm^{-3} for the p-type aluminium-doped zinc oxide film. The optical transmittance has been as high as 85-90% in the 400-900 nm wavelength range. The aluminium-doped zinc oxide (2 at.% Al) films exhibited the hexagonal wurzite structure with (002) preferred crystal orientation. The electrical characteristics were depicted by the gradual increase in N and NO that occupy the oxygen vacancies.

Magnolol inhibits Streptococcus suis-induced inflammation and ROS formation via TLR2/MAPK/NF-κB signaling in RAW264.7 cells

64%

Wang J., Sun Y., Zhang L., Xu W., You J., Lu H., Song Y., Wei J., Li L.

Polish Journal of Veterinary Sciences

2018

vol. 21

issue 1

Atomic Layer Deposition of Magnetic Thin Films

64%

Mantovan R., Georgieva M., Perego M., Lu H., Cocco S., Zenkevich A., Scarel G., Fanciulli M.

Acta Physica Polonica A

2007

vol. 112

issue 6

1271-1280

We report on the research effort towards the development of processes for the realization of magnetic tunnel junctions by atomic layer deposition. Our strategy follows two main schemes. The first is a hybrid process where the ferromagnetic layers are produced by chemical vapour deposition and the tunnel oxide is deposited by atomic layer deposition. As ferromagnetic electrodes we use Co and Fe_3O_4, while MgO, Al_2O_3, and HfO_2 are employed as tunnel oxides. The second and most intriguing scheme is a full-oxide approach in which the ferromagnetic layers and the tunnel barrier layer are all oxides grown by atomic layer deposition. As ferromagnetic layers we focused on the growth of complex manganites (La_{0.7 Sr_{0.3 MnO_3) while as a tunnel oxide we propose La_2O_3. Film composition has been studied with time of flight secondary ion mass spectroscopy and Rutherford backscattering spectrometry. X-ray diffraction, X-ray reflectivity, and Fourier transform infrared spectroscopy have been used to investigate the structure and morphology of the layers. The magnetic properties of the films are measured by superconducting quantum interference device magnetometer.

Refine search results

2 Acta Physica Polonica A

1 Polish Journal of Veterinary Sciences

1 2018

1 2011

1 2007

3 Lu H.

1 Chen Y.

1 Cocco S.

1 Fanciulli M.

1 Georgieva M.

1 Li L.

1 Mantovan R.

1 Perego M.

1 Scarel G.

1 Song Y.

1 Sun Y.

1 Wang J.

1 Wei J.

1 Wu G.

1 Xu W.

1 You J.

1 Zenkevich A.

1 Zhang L.

Search results

Aluminum-Doped Zinc Oxide Thin Films Prepared by Sol-Gel and~RF Magnetron Sputtering

Magnolol inhibits Streptococcus suis-induced inflammation and ROS formation via TLR2/MAPK/NF-κB signaling in RAW264.7 cells

Atomic Layer Deposition of Magnetic Thin Films