We have studied thin CeO_{2} buffer layers prepared by aerosol MOCVD on (11̅02) Al_{2}O_{3} substrate at high deposition temperature, T_{d}= 900°C. A texture analysis by X-ray diffraction showed a high degree of epitaxial character of CeO_{2} films. A study of the microstructure by transmission electron microscopy revealed that the CeO_{2} films are in a relaxed state being composed of slightly misoriented blocks surrounded by dislocations. The films are smooth, giving mean square root values of the surface roughness measured by atomic force microscopy up to 1 nm.
Epitaxial manganite La_{0.67}Sr_{0.33}MnO₃ (LSMO) layers, with a thickness of 20-50 nm, are prepared on single crystal (001) SrTiO₃ (STO) substrates by pulsed laser deposition technique. Structural characterization (composition analysis, surface morphology), investigated by the Rutherford backscattering spectroscopy and atomic force microscopy, reveals the growth of stoichiometric LSMO films with a smooth surface (root-mean-square value of 0.21-1.6 nm). The prepared LSMO films possess high Curie temperature ( ≈ 412 K), low room temperature resistivity (1-2 mΩ cm) and maximum of temperature coefficient of resistivity TCR = 2.7% K¯¹ at 321 K.
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