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Gain Spectrum for the In_4Se_3 Crystal with a Non-Standard Dispersion Law of Charge Carriers

100%
Bercha D., Glukhov K., Sznajder M.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
720-722
EN
Based upon the ab initio band structure calculations results and the density of states function of the orthorhombic In_4 Se_3 crystal as well as the experimental data concerning its radiative recombination, it was shown that the Bernard-Durafour condition is fulfilled for this crystal. The absorption coefficient α that exhibits a negative value in the given energy range and for the given concentrations of non-equilibrium charge carriers, was calculated.
2
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Universality of the Empty-Lattice Approximation to Predict the Topology of Energy Spectra of High-Symmetry Crystals and Superlattices Based upon Them

100%
Sznajder M., Bercha D., Glukhov K., Slipukhina I.
Acta Physica Polonica A
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2006
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vol. 110
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issue 3
369-378
EN
O_h^7, T_d^2 and O_h^5 symmetry crystals were discussed to demonstrate universality of the empty-lattice approximation to obtain the topology and symmetry of the elementary energy bands creating the valence band of those crystals and to predict a localization of the maximum of valence electron density distribution in the unit cell. The elaborated concept of the elementary energy bands was applied to the (GaAs)_5/(AlAs)_5 superlattice and ordered solid solution Pb_{0.5}Sn_{0.5}S.
3
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Electron-Phonon Interaction as a Mechanism of Phase Transition in the CuInP_{2}S_{6} Crystal

100%
Bercha D., Bercha S., Glukhov K., Sznajder M.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1143-1145
EN
Studies on the phases of CuInP_{2}S_{6} crystal exhibiting phase transitions of the order-disorder type are performed. A possibility for the cooperative Jahn-Teller effect to occur in this crystal is analyzed. For this purpose, the procedure of constructing the potential energy matrix is generalized for the case of crystal and it is illustrated by the construction of the adiabatic potentials for Γ_{5}-Γ_{5} vibronic coupling for the proto- and paraelectric phases of CuInP_{2}S_{6}. The structure of the obtained potentials is analyzed together with the discussion on the appearance of spontaneous polarization in this crystal.
4
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Dispersion Law with a Low-Energy Non-Parabolicity for the Charge Carriers in the In_{4}Se_{3} Crystal and Related Effects

100%
Kharkhalis L., Shenderovskii V., Sznajder M., Bercha D.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
952-953
EN
The influence of parameters of the dispersion law exhibiting a low-energy non-parabolicity for the In_{4}Se_{3} crystal on the plasma-electric effect occurring in the non-equilibrium plasma of this semiconductor was investigated under the circumstances that a longitudinal plasma wave propagates in its non-equilibrium plasma.
5
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The In_{4}Se_{3} Crystal as a Three-Dimensional Imitative Model of Phenomena in One-Dimensional Crystals

88%
Bercha D., Sznajder M., Bercha A., Kharkhalis L., Rushchanskii K.
Acta Physica Polonica A
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1998
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vol. 94
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issue 2
250-254
EN
For three-dimensional charge carriers described by the dispersion law with quartic terms of the wave vector, the density of states function similar as in the one-dimensional case was determined. This similarity allows the Pekar and Dejgen condenson states in the continuum approximation to exist. The calculated phonon spectrum reveals optical vibrations of a very low frequency, which favours the electron-phonon interaction and creation of the condenson states.
6
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Parameters of an Unique Condenson State in the Structure of the rm In_4 Se_3 Crystal

88%
Sznajder M., Lim Y., Glukhov K., Kharkhalis L., Bercha D.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1115-1117
EN
Based upon the ab initio band structure calculations results the dispersion law parameters of charge carriers of the orthorhombic In_4 Se_3 semiconductor as well as of its Sn- and Te-doped compounds were calculated. This allowed to estimate parameters of the electron condenson states in those compounds.
7
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Band Structure and Optical Properties οf the Layered Hg_{3}TeCl_{4} Crystal

76%
Sznajder M., Bercha D., Potera P., Khachapuridze A., Panko V., Bercha S.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
950-951
EN
First experimental investigations on absorption and photoluminescence of the novel Hg_{3}TeCl_{4} monocrystals grown by the Bridgman method are reported. A comparison of the measurement results with theoretical band structure calculations of the Hg_{3}TeCl_{4} crystal confirmed that Hg_{3}TeCl_{4} is a wide-band-gap photoconductor (E_{g}= 3.64 eV at 24 K) with the effective masses of charge carriers characteristic for semiconductors. Energetic position of the main photoluminescence peak and its temperature dependence indicates the presence of an additional energy level in the energy gap which takes part in the radiative recombination process and whose origin was discussed.
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