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Nature of Donors in SiC

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Suchanek B., Dwiliński R., Kamińska M., Palczewska M., Vlaskina S.

Acta Physica Polonica A

1995

vol. 87

issue 2

321-324

6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.

Competition of Radiation Processes in 6H-SiC Observed by Luminescence

100%

Wysmołek A., Mroziński P., Dwiliński R., Vlaskina S., Kamińska M.

Acta Physica Polonica A

1995

vol. 87

issue 2

437-440

We report on the results of photoluminescence and thermoluminescence measurements of various 6H-SiC crystals. At low temperature in all n-type samples two bands with maxima at 2.7 eV (blue) and 1.8 eV (orange) were detected. In the p-type material only blue band was observed. The measurements performed at a broad range of temperatures showed totally different behaviour of photoluminescence intensity of both bands. The presented results could be explained in the model assuming well established donor-acceptor pair recombination for the blue band emission and the conduction band - deep defect transition for the orange band. The proposed model was confirmed by thermoluminescence measurements of the orange band which showed peaks at 30 K, 80 K, 100 K, 150 K attributed to ionization of subsequent shallow donor levels.

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2 Acta Physica Polonica A

2 1995

2 Dwiliński R.

2 Kamińska M.

2 Vlaskina S.

1 Mroziński P.

1 Palczewska M.

1 Suchanek B.

1 Wysmołek A.

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Nature of Donors in SiC

Competition of Radiation Processes in 6H-SiC Observed by Luminescence