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Local Electric In-Plane Potential Fluctuations in the CdTe/CdMgTe Based Multiple Quantum Wells

100%
Nogajewski K., Karpierz K., Łusakowski J., Grynberg M., Kossut J.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1259-1265
EN
Unusual features in the magnetophotoconductivity spectra registered under far infrared illumination of the CdTe/CdMgTe based multiple quantum wells, uniformly n-doped are presented. It is shown that each spectrum exhibits one or two peaks of non-symmetrical shape, with position of their maxima dependent on the voltage applied to the sample. The peaks, observed in the configuration of the crossed electric and magnetic fields, are strongly shifted by a relatively weak in-plane electric field - of the order of 10-50 V/cm. Two different approaches to explain the observed influence are presented. Both are based on a two-step process leading to the photoconductivity signal. The first approach assumes that only the process of photon absorption is influenced by the external fields, the second one assumes that only the process of phonon assisted electron transfer from the excited donor state into the conduction band is influenced by the external fields.
2
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The Effect of Substrate on Vibrational Properties of Single-Layer MoS₂

86%
Gołasa K., Molas M., Nogajewski K., Grzeszczyk M., Zinkiewicz M., Potemski M., Babiński A.
Acta Physica Polonica A
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2016
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vol. 130
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issue 5
1172-1175
EN
We report on the Raman scattering from single-layer molybdenum disulfide (MoS₂) deposited on various substrates: Si/SiO₂, hexagonal boron nitride (h-BN), sapphire, as well as suspended. Room temperature Raman scattering spectra are investigated under both resonant (632.8 nm) and non-resonant (514.5 nm) excitations. A rather weak influence of the substrate on the Raman scattering signal is observed. The most pronounced, although still small, is the effect of h-BN, which manifests itself in the change of energy positions of the E' and A'₁ Raman modes of single-layer MoS₂. We interpret this modification as originating from van der Waals interaction between the MoS₂ and h-BN layers.
3
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Strong Photoluminescence Fluctuations in Laser-Thinned Few-Layer WS₂

86%
Bala Ł., Łacińska E., Nogajewski K., Molas M., Wysmołek A., Potemski M.
Acta Physica Polonica A
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2016
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vol. 130
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issue 5
1176-1178
EN
We present results of μ-Raman and μ-photoluminescence study of few-layer WS₂ flakes that have been locally thinned down by a focused laser beam. The Raman spectroscopy measurements prove that the investigated flake was locally thinned down to a monolayer. Interestingly, μ-photoluminescence experiments allowed us to observe huge intensity fluctuations at the boundary of laser-thinned region. Similar effects were found at the edges of a WS₂ bilayer flake, which has not been subjected to laser-thinning. The origin of the observed time evolution of the photoluminescence response is discussed in terms of potential fluctuations resulting from light-induced changes of the charge state of defects.
4
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Raman Spectroscopy of Shear Modes in a Few-Layer MoS₂

86%
Gołasa K., Grzeszczyk M., Zinkiewicz M., Nogajewski K., Potemski M., Wysmołek A., Babiński A.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-132-A-134
EN
We study low frequency vibrational modes in atomically thin molybdenum disulfide (MoS₂) by means of the Raman scattering spectroscopy. A shear mode related to rigid interlayer vibrations is identified. Its energy evolution with the increasing number of layers is well described using a linear chain model with only nearest neighbor interactions. The resulting force constant (Kₓ = 2.7 × 10¹⁹ N/m³) corresponds well to the previously published data.
5
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High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors

73%
Boubanga-Tombet S., Nogajewski K., Teppe F., Knap W., Karpierz K., Łusakowski J., Grynberg M., Dyakonov M.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
939-940
EN
Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.
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