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Influence of Ion Implantation on Magnetic Structural and Optical Properties of (Ga,Mn)As Epitaxial Films

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Yastrubchak O., Kulik M., Żuk J., Domagała J., Szymczak R., Wosiński T., Sadowski J., Tóth A.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 5
1445-1450
EN
We performed implantation experiments, applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen implantation and confirmed the preservation of high structural and optical quality of the neon implanted (Ga,Mn)As films.
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